On Wednesday, July 6, 1994 at 10:21:29 AM UTC-5, Superconductivity   
   Publications wrote:   
   > The following article appears in the June 1994 monthly technical   
   > edition of Superconductivity News (Vol. 6, No. 42).   
   >   
   > William Jay Fogal, president of Quick Chek Industries (Martinez, GA)   
   > has invented and patented an electronic device for which he has made   
   > very broad claims.  Others learning about the device have further   
   > extrapolated the claims to the point that if real, the device means   
   > the end of power utilities, the rendering useless of the entire   
   > electrical power grid, the demise of manufacturers of electrical   
   > generators and electrical cable, and a dramatic reduction in the   
   > activities of hundreds of thousands of ancillary service providers.   
   > Most industries will have to change or die.  The infrastructure   
   > alterations will be the most profound the world has ever witnessed.   
   > While the odds are stacked against it being real, the staff of   
   > Superconductivity News (SN) believes it is important to report the   
   > events as they occur.   
   >   
   > Fogal is not claiming he has invented a room temperature   
   > superconductor.  What he has invented is either completely fatuous or   
   > it is astounding in that it strikes at the very core theoretical   
   > underpinnings of electromechanics.  Fogal told SN that his device grew   
   > out of his efforts to fix a broken car radio in the mid 1970s.  As he   
   > got past the wiring and the circuits and into the semiconductors   
   > actually running the radio, he made changes that greatly improved the   
   > audio quality.  He then let his ideas lay idle for more than a decade   
   > before finally returning to the research in the late 1980s.   
   >   
   > Fogal says his charged barrier semiconductor device allows electrons   
   > to flow without resistance (i.e., as in superconductors) at room   
   > temperature.  He claims the device demonstrates a very high AC voltage   
   > and AC current gain.  His charged barrier device is on a bipolar   
   > design that can be incorporated in (MOS) metal oxide semiconductor   
   > designs, as well as multiple gate devices.  It operates on a hall   
   > effect electromagnetic field internal device.  The hall effect   
   > magnetic field forces electron flow and angular spin of the electrons   
   > in the same direction to the top of the conduction bands in the   
   > crystal lattice on semiconductor devices, unlike (SOI) silicon on   
   > insulator devices that force electron flow to the surface of the   
   > semiconductor lattice.  "Unlike superconductors which generate an   
   > external field, my semiconductor creates a self-regulating magnetic   
   > field internal to the device," Fogal said.   
   >   
   > -- Fogal's Description of His Device --   
   >   
   > Charged barrier semiconductor devices incorporate a base plate member   
   > of a semiconductor crystal.  Also incorporated with the base plate   
   > member is a dialectic material and a second base plate member.  The   
   > combination of the two base plate members constitutes an electrolytic   
   > capacitor.  The first base plate member will create a transverse   
   > electric field that is known as a hall effect in the base plate member   
   > of the semiconductor crystal.  The ratio of the transverse electric   
   > field strength to the product of the current and the magnetic field   
   > strength is called the hall coefficient, and its magnitude is   
   > inversely proportional to the carrier concentration on the base plate   
   > member.  The product of the hall coefficient and the conductivity is   
   > proportional to the mobility of the carriers when one type of carrier   
   > is dominant.  Since the base plate member is tied directly to the   
   > emitter junction of the semiconductor, the hall coefficient comes into   
   > play with the creation of a one pole electromagnet in the base plate   
   > member.   
   >   
   > The hall effect of the electrolytic capacitor, in relation to the   
   > position on the crystal lattice, will force electron angular spin in   
   > the same direction and electron flow to the top of the conduction   
   > bands in the lattice.  The magnetic flux and the density of the   
   > carriers on the electrolytic capacitor plate are in direct proportion   
   > to the magnetic flux and carrier concentration on the emitter junction   
   > on the semiconductor crystal.   
   >   
   > Since the angular spin and the flow of the electrons are in the same   
   > direction, due to the influence of the electromagnetic field, the   
   > electron lattice interaction factor does not come into play.  The   
   > electron wave density is greater and the mobility of the electron flow   
   > is faster.  The device does not exhibit frequency loss in the wave.   
   >   
   > The base or gate of the semiconductor is more sensitive to input   
   > signal.  These devices will typically turn on with an input to the   
   > junction in the area of 0.2 MV to 0.4 MV with an output at the   
   > collector junction of 450 MV at 133.5 UA of current.   
   >   
   > -- Electron Wave Function In Charged Barrier Technology --   
   >   
   > Think of the conduction bands in a crystal lattice as a highway.   
   > Electrons in the free state will move along this highway.  The only   
   > difference is the electron angular spin can be in different   
   > directions.  With the electrons spinning in different directions, the   
   > electrons would travel on different lanes of the highway and   
   > collisions can occur.  The scattering and the collision of the   
   > electrons can cause friction and resistance to the flow.  The   
   > resistance to the flow and the friction can cause semiconductors to   
   > run hot.   
   >   
   > In semiconductor devices, this is called lattice scattering or   
   > electron lattice interaction.  If we could make the electrons move in   
   > one direction, and also spin in the same direction, then we could have   
   > more traffic electrons (on the highway) without having the resistance   
   > or the collisions.  We could put a barrier between the lanes on the   
   > highway.  But, the electrons could still spin in different directions.   
   > But, what if we could charge this barrier?!  Turn this barrier into an   
   > electromagnetic field!  An electromagnetic field in one direction.  A   
   > one pole electromagnet!  A hall effect magnetic field.  This one pole   
   > electromagnetic field would make almost all of the electrons spin in   
   > the same direction.  Because the electrons are a negative charge and   
   > the electromagnetic field has a negative charge, the electrons travel   
   > in unison and then we could have more electrons on the highway, and   
   > the electron travel could be faster.   
   >   
   > The orientation of the spin of the electrons in the crystal lattice,   
   > due to the electromagnetic field, has a direct impact on the formation   
      
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